Crystal Silicon Ingots

Growing method: CZ (Czochralsky)

Parameters Value

DopantBoron

Typep

Diameter, mm 100 - 150

Diameter Tolerance, mm ? 0. 3

Orientation (100)

Orientation Tolerance, deg? 2

Resistivity, Ohm?cm0. 5 - 3. 0

Radial Resistivity Variation, % ? 20

Oxygen Content, ppma10 - 20

Carbon Content, ppma< 1. 0

Carrier Lifetime, m sec>10

Pseudo- square dimensions, mm 100x100 - 125x125

Ingot length: 40 - 400 mm Quality Control criteria: ASTM Standards