Grade: 6N (99. 9999% ) Place of Origin: Russian Federation
Diameter silicon ingots 150- 200 mm , length 150- 500 mm
purity >= 6N (99, 9999)
type P/ N
resistivity - 0, 5- 20 Ohm/ cm3
CZ method
Silicon monocrystalline, polycrystalline ingots 6NWe are offer poly and mono crystalline silicon from our warehouse in Russia.
Now we have in warehouse polycrystalline silicon ingots 8000 kg, monocrystalline silicon ingots 5000 kg. Price depends from quantity and your specification. Minimum order 30kg. Samples are available. We accept L/ C, T/ T. We are interesting in long terms contracts and provide discounts to regular customers. We can provide certificate of quality.
Diameter silicon ingots 150- 200 mm , length 150- 500 mm
- purity >= 6N (99, 9999)
- type P/ N
- resistivity - 0, 5 - 20 Ohm/ cm3
- Growing method: CZ
More Detail s read below:
Semiconductor mono- crystalline silicon for microelectronics:
Name (Electronic grade) KDB- (1- 30)
Diameter 150- 205 mm
Conductivity- type imparting material p, boron
Orientation of crystallographic axis (100)
Resistivity 1- 30 Ohm*cm
Radial gradient of resistivity constant (RRG) , not more 8 %
Concentration optically active oxygen (No) 7- 9x1017cm- 3
Oxygen radial gradient (ORG) , not more 7%
Concentration carbon (Nc) , not more 2x1016cm- 3
Life time, not less 4?p msec
Microdefects (EPD) , not more 100cm- 2
Surface Defects (chips, pitholes, cracks, crystalline irregularities) None
oxidation- induced stacking fault, not more 50 cm- 2
Density of etch pit dislocation, not more 10 cm- 2
Off- orientation geometrical axis of ingot from crystallographic axis, not more 3?
Ingot Length 150- 500 mm (by agreement with the client)
Name (Electronic grade) KEF- 4, 5
Diameter 150- 205 mm
Conductivity- type imparting material n, phosphor
Orientation of crystallographic axis (100)
Resistivity 4, 5+- 0, 9 Ohm*cm
Radial gradient of resistivity constant (RRG) , not more 10%
Concentration optically active oxygen (No) 7- 9x1017cm- 3
Oxygen radial gradient (ORG) , not more 10%
Concentration carbon (Nc) , not more 2x1016cm- 3
Life time, not less >18 msec
Microdefects (EPD) , not more 100cm- 2
Surface Defects (chips, pitholes, cracks, crystalline irregularities) none
oxidation- induced stacking fault, not more 100cm- 2
Density of etch pit dislocation, not more 10cm- 2
Off- orientation geometrical axis of ingot from crystallographic axis, not more 3?
Ingot Length 150- 500 mm (by agreement with the client)
Monocrystalline silicon for solar energy:
Name (solar grade) KDB- (0, 5- 20)
Diameter 150- 205 mm
Conductivity- type imparting material p, boron
Orientation of crystallographic axis (100)
Resistivity (R) 0, 5- 20 Ohm*cm
Concentration optically active oxygen, not more 1x1018cm- 3 (depending on feed materials)
Concentration carbon, not more 1*1017cm- 3 (depending on feed materials)
Life time, not less >10 msec
Off- orientation geometrical axis of ingot from crystallographic axis, not more 3?
Ingot Length 150 - 500 mm (by agreement with the client)
Name (solar grade) KEF- (0, 5- 6)
Diameter 150- 205 mm
Conductivity- type imparting material n, phosphor
Orientation of crystallographic axis (100)
Resistivity (R) 0, 5 - 6 Ohm*cm
Concentration optically active oxygen, not more 1x 1018cm- 3 (depending on feed materials)
Concentration carbon, not more 1*1017 cm- 3 (depending on feed materials)
Life time, not less >10 msec
Off- orientation geometrical axis of ingot from crystallographic axis, not more 3?
Ingot Length 150- 500 mm (by agreement with the client)
