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Monocrystalline silicon ingot
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Offer Description - Monocrystalline silicon ingot
Monocrystalline silicon ingots, round, Electronic grade, resistivity 0. 5- 3 Ohm. cm, diameter 150, 200 mm +/ - 5 mm
Monocrystalline silicon ingots, round, Electronic grade, resistivity 0. 5- 3 Ohm. cm, diameter 150, 200 mm +/ - 5 mm , P- type, Boron- Dopant, Growing method: CZ, length 200 mm - 500 mm
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Country: Russian Federation
City: Irkutsk
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19/10/2008
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19/10/2008
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