Monocrystalline Solar Grade Silicon Ingots

Place of Origin: Russian Federation Brand Name: Krascvetmet. Silicon



Diameter: 150 +/ - 0, 5,

Resistivity: 0, 5- 3, 0 ohm. cm,

Life time: >10 msec,

Length of ingot: 120- 450 mm ,

Orientation: <100> +/ - 2

SpecificationMonocrystalline silicon in ingots (round or pseudosquared) No. Parameters Value Unit

1. Method of cultivation onCzochralski

2. Type/ DopandP- type/ Boron

3. Diameter (dia) 156 ? 0, 5 mm

4. Pseudosquared ingot dimension (h) 125 x 125 (? 0, 5) mm

5. Resistivity0, 5 - 3, 0 - 6, 0Ohm*cm

6. Orientation<100> ? 20degree

7. Life time carrier>10msec

8. Oxygen< 1*1018atom/ cm3

9. Carbon< 1*1017atom/ cm3

10. Ingot length120 - 450 mm

11. Angle between any sides of pseudosquared ingot () 90 ? 0, 3degree

12. Squareness and parallesism< 0, 5 mm