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Poly crystalline silicon ingots

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Country: Russian Federation
City: Moscow

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update 08/08/2009
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Offer Description - Poly crystalline silicon ingots



Grade: 6N (99. 9999% ) Place of Origin: Russian Federation



Diameter silicon ingots 150- 200 mm , length 150- 500 mm

purity >= 6N (99, 9999)

type P/ N

resistivity - 0, 5- 20 Ohm/ cm3

CZ method

Silicon monocrystalline, polycrystalline ingots 6N

We are offer poly and mono crystalline silicon from our warehouse in Russia.

Now we have in warehouse polycrystalline silicon ingots 8000 kg, monocrystalline silicon ingots 5000 kg. Price depends from quantity and your specification. Minimum order 30kg. Samples are available. We accept L/ C, T/ T. We are interesting in long terms contracts and provide discounts to regular customers. We can provide certificate of quality.



Diameter silicon ingots 150- 200 mm , length 150- 500 mm

- purity >= 6N (99, 9999)

- type P/ N

- resistivity - 0, 5 - 20 Ohm/ cm3

- Growing method: CZ



More Detail s read below:

Semiconductor mono- crystalline silicon for microelectronics:

Name (Electronic grade) KDB- (1- 30)

Diameter 150- 205 mm

Conductivity- type imparting material p, boron

Orientation of crystallographic axis (100)

Resistivity 1- 30 Ohm*cm

Radial gradient of resistivity constant (RRG) , not more 8 %

Concentration optically active oxygen (No) 7- 9x1017cm- 3

Oxygen radial gradient (ORG) , not more 7%

Concentration carbon (Nc) , not more 2x1016cm- 3

Life time, not less 4?p msec

Microdefects (EPD) , not more 100cm- 2

Surface Defects (chips, pitholes, cracks, crystalline irregularities) None

oxidation- induced stacking fault, not more 50 cm- 2

Density of etch pit dislocation, not more 10 cm- 2

Off- orientation geometrical axis of ingot from crystallographic axis, not more 3?

Ingot Length 150- 500 mm (by agreement with the client)



Name (Electronic grade) KEF- 4, 5

Diameter 150- 205 mm

Conductivity- type imparting material n, phosphor

Orientation of crystallographic axis (100)

Resistivity 4, 5+- 0, 9 Ohm*cm

Radial gradient of resistivity constant (RRG) , not more 10%

Concentration optically active oxygen (No) 7- 9x1017cm- 3

Oxygen radial gradient (ORG) , not more 10%

Concentration carbon (Nc) , not more 2x1016cm- 3

Life time, not less >18 msec

Microdefects (EPD) , not more 100cm- 2

Surface Defects (chips, pitholes, cracks, crystalline irregularities) none

oxidation- induced stacking fault, not more 100cm- 2

Density of etch pit dislocation, not more 10cm- 2

Off- orientation geometrical axis of ingot from crystallographic axis, not more 3?

Ingot Length 150- 500 mm (by agreement with the client)



Monocrystalline silicon for solar energy:

Name (solar grade) KDB- (0, 5- 20)

Diameter 150- 205 mm

Conductivity- type imparting material p, boron

Orientation of crystallographic axis (100)

Resistivity (R) 0, 5- 20 Ohm*cm

Concentration optically active oxygen, not more 1x1018cm- 3 (depending on feed materials)

Concentration carbon, not more 1*1017cm- 3 (depending on feed materials)

Life time, not less >10 msec

Off- orientation geometrical axis of ingot from crystallographic axis, not more 3?

Ingot Length 150 - 500 mm (by agreement with the client)



Name (solar grade) KEF- (0, 5- 6)

Diameter 150- 205 mm

Conductivity- type imparting material n, phosphor

Orientation of crystallographic axis (100)

Resistivity (R) 0, 5 - 6 Ohm*cm

Concentration optically active oxygen, not more 1x 1018cm- 3 (depending on feed materials)

Concentration carbon, not more 1*1017 cm- 3 (depending on feed materials)

Life time, not less >10 msec

Off- orientation geometrical axis of ingot from crystallographic axis, not more 3?

Ingot Length 150- 500 mm (by agreement with the client)
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