Silicon Ingot-8" IC Grade of 11N

Place of Origin: Japan



Silicon Ingot- 8" IC Grade of 11N

8 Mono- Crystalline Ingot specificationOrigin: JapanGrade: IC gradeCrystal Growth Method: CZ or MCZConductivity type: P- typeDopant: BoronOrientation: 1- 0- 0?3?Resistivity: 3. 0~6. 0 ohm- cmOxygen Content: ?24. 0x1017 atoms/ cm3Carbon content: ?3. 35 x 1017 atoms/ cm3Bulk crystal life time: ?10 ?sDiameter: ?203. 0 mm Length: 100 400 mm Etch pit density (EPD) : ?3000 pits/ cm3Side/ End surface finish: Non- grinding or grinding finish (No grinding roughness considered