silicon ingot

Material: Monocrystalline Silicon Place of Origin: Germany



monocrystalline silicon ingot, d= 200 mm , p- type boron

parameterspec proposalco mm ent

orientation<100>+- 3?

dopantboron

resistivity target3- 6 Ohmcm

oxygen
carbon
diffusion length/ lifetimee 100 ?m (Boron >1Ohmcm)

or >/ = 10 micro secSiltronic to choose

dislocationsnone

surfaceunground

ingot length150 - 450 mm

diameter205 +/ - 3 mm

flat/ notchnone