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25/03/2010
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25/03/2010
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Offer Description - silicon ingot
Grade: 6N (99. 9999% ) Place of Origin: Guangdong, China
We have advanced equipment and Wafer production capacity, reliable property and outstanding quality ensure high EFF solar cells.
Sepcification: 6N minimum, Mono, Solar grade Cristal growth method: CZDopant: P/ Boron Dislocation density: less than 100 cm2Orientation: 100 +- 3 face and diagonalOxygen concentration: less than 1. 0x1018 atm os/ cm 3Carbon concentration: less than 3. 0x1016 atm os/ cm 3 Resistivity: 0. 5- 3Lifetime: 10usSize: 153 +- 3 mm Length: 200 mm - 400 mm
