silicon ingots for semiconductor and solar application

Place of Origin: Ukraine



produce high quality monocrystalline silicon ingots semiconductor and solar application, for more information see description

Basic parameters of silicon ingots for semiconductor application.

Growth metod: CZ

Type/ Dopant: N- type / Phosphorus or Antimony or Arsenic doped

P- type / Boron doped



Diameter: from 2" - to 8"

Orientation: (100) or (111)

Resistivity: 0, 002 - 140 Ohm*cm

Oxygen content : <10*1017 at/ cm3 (<20 ppma) or per customer's specification

Carbon content : <5*1016 at/ cm3 (<1 ppma) or per customer's specification

Basic parameters of silicon ingots for solar application.



Type/ Dopant: P/ Boron or N/ Phosphorus

Square size: Pseudosquare: 103x103 mm or 125x125 mm or 156x156 mm

Special shape per customer's specification

Diagonal: 125 mm , 135 mm , 150 mm , 165 mm , 195 mm , 205 mm

Orientation: (100) +3o

Resistivity : 0, 5- 2, 0 Ohm*cm; 3, 0- 6, 0 Ohm*cm

Oxygen content : <10*1017 at/ cm3 (<20 ppma)

Carbon content : <5*1016 at/ cm3 (<1 ppma)

RRV <12%

Life time >8 ?sec